Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Overall score
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 17.9
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    22 left arrow 73
    Around -232% lower latency
  • Faster write speed, GB/s
    12.6 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 22
  • Read speed, GB/s
    3,510.5 left arrow 17.9
  • Write speed, GB/s
    1,423.3 left arrow 12.6
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 3152
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons