Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

Overall score

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB

Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB

Faster reading speed, GB/s

3 17

Average value in the tests

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Reasons to consider
Micron Technology 8ATF1G64HZ-3G2E1 8GB

Below the latency in the PassMark tests, ns

23 73

Around -217% lower latency
Faster write speed, GB/s

13.4 1,423.3

Average value in the tests
Higher memory bandwidth, mbps

25600 5300

Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

73 23
Read speed, GB/s

3,510.5 17.0
Write speed, GB/s

1,423.3 13.4
Memory bandwidth, mbps

5300 25600

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

476 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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