RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
16.3
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
69
Around -200% lower latency
Faster write speed, GB/s
10.8
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
23
Read speed, GB/s
3,325.1
16.3
Write speed, GB/s
1,441.2
10.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
525
2763
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663CZ3-CE6 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Kingston 99U5403-036.A00G 4GB
Kingston 99U5702-094.A00G 8GB
Kingston 9905584-016.A00LF 4GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C14-16GTZKY 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMW64GX4M8C3000C15 8GB
Kingston 99P5471-002.AOOLF 4GB
A-DATA Technology AE4S240038G17-BHYA 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Heoriady HX2666DT8G-TD 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK16GX4M1A2666C16 16GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/8G 8GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Report a bug
×
Bug description
Source link