RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology CT16G4SFD824A.M16FE 16GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Crucial Technology CT16G4SFD824A.M16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
14.7
Average value in the tests
Reasons to consider
Crucial Technology CT16G4SFD824A.M16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
69
Around -86% lower latency
Faster write speed, GB/s
11.6
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
37
Read speed, GB/s
3,325.1
14.7
Write speed, GB/s
1,441.2
11.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
525
2688
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB RAM comparisons
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CH9 4GB
Kingston XK2M26-MIE-NX 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386A2G40DB0-CPB 16GB
Corsair CML8GX3M2A1866C9 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK16GX4M2G4000C16 8GB
Samsung M378T5663QZ3-CF7 2GB
Avant Technology W6451U66J7240ND 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-16GRS 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C15D4/4G 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3000C16-8GTRS 8GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-3200C14-8GTZKY 8GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4000C16-8GVK 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Avexir Technologies Corporation T-20181206 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Avant Technology F6451U64F9333G 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Report a bug
×
Bug description
Source link