RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
14.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
69
Around -82% lower latency
Faster write speed, GB/s
10.3
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
38
Read speed, GB/s
3,325.1
14.2
Write speed, GB/s
1,441.2
10.3
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
525
2148
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD32GX4M4B3466C16 8GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMT64GX4M4C3466C16 16GB
AMD R5316G1609U2K 8GB
AMD R7S48G2400U2S 8GB
AMD R5316G1609U2K 8GB
Kingston X2YH1K-MIE-NX 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905702-019.A00G 8GB
G Skill Intl F5-5600J4040C16G 16GB
Apacer Technology 78.CAGN7.4000C 8GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M391A1K43BB1-CRC 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMN16GX4M2Z3200C16 8GB
Kingston HP698651-154-MCN 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Report a bug
×
Bug description
Source link