RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Compare
Samsung M4 70T5663QZ3-CF7 2GB vs Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Overall score
Samsung M4 70T5663QZ3-CF7 2GB
Overall score
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
17
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
64
Around -121% lower latency
Faster write speed, GB/s
12.6
1,869.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
29
Read speed, GB/s
4,477.7
17.0
Write speed, GB/s
1,869.1
12.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
697
3140
Samsung M4 70T5663QZ3-CF7 2GB RAM comparisons
Samsung M4 70T5663RZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK8GX4M1D3000C16 8GB
Samsung M4 70T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M4B3200C15 4GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMT64GX4M4Z3600C18 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston ACR26D4U9D8MH-16 16GB
Samsung M471B5273DH0-CH9 4GB
Samsung M391A2K43BB1-CPB 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Panram International Corporation D4U2666P-8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK16GX4M2B3733C17 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-3200C16-16GTZR 16GB
Report a bug
×
Bug description
Source link