RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
Compare
Samsung M471A1G44AB0-CWE 8GB vs G Skill Intl F4-3600C16-8GTESC 8GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Overall score
G Skill Intl F4-3600C16-8GTESC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-8GTESC 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
50
Around -61% lower latency
Faster reading speed, GB/s
20.3
15.3
Average value in the tests
Faster write speed, GB/s
18.2
10.9
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
50
31
Read speed, GB/s
15.3
20.3
Write speed, GB/s
10.9
18.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2512
3738
Samsung M471A1G44AB0-CWE 8GB RAM comparisons
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-8GTESC 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3400C16-8GTZKW 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Transcend Information JM2666HLG-16GK 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Mushkin 991988 (996988) 4GB
Corsair CM4X32GC3200C16K2E 32GB
Kingston 9905403-090.A01LF 4GB
Asgard VMA44UG-MEC1U2AW1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2666C18-32GVK 32GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMV8GX4M1A2400C16 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMU32GX4M4C3000C15 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M378A1K43EB2-CVF 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Patriot Memory (PDP Systems) 2400 C17 8GB
AMD R748G2400S2S 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
V-GEN D4H4GL26A8TS5 4GB
Report a bug
×
Bug description
Source link