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Samsung M471A1G44AB0-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Compare
Samsung M471A1G44AB0-CWE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
50
Around -92% lower latency
Faster reading speed, GB/s
16.2
15.3
Average value in the tests
Faster write speed, GB/s
12.6
10.9
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
50
26
Read speed, GB/s
15.3
16.2
Write speed, GB/s
10.9
12.6
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2512
2955
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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