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Samsung M471A1K43DB1-CWE 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB

Samsung M471A1K43DB1-CWE 8GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Differences Specifications Comments

Differences

Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 44
    Around 25% lower latency
Lexar Co Limited LD4AS016G-H3200GST 16GB Reasons to consider
Lexar Co Limited LD4AS016G-H3200GST 16GB
Report a bug
  • Faster reading speed, GB/s
    16.6 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    14.2 left arrow 13.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1K43DB1-CWE 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 44
  • Read speed, GB/s
    16.1 left arrow 16.6
  • Write speed, GB/s
    13.0 left arrow 14.2
  • Memory bandwidth, mbps
    25600 left arrow 25600
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2987 left arrow 3146

Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Lexar Co Limited LD4AS016G-H3200GST 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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