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Samsung M471A1K43DB1-CWE 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB

Samsung M471A1K43DB1-CWE 8GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 44
    左右 25% 更低的延时
Lexar Co Limited LD4AS016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 13.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1K43DB1-CWE 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 44
  • 读取速度，GB/s
    16.1 left arrow 16.6
  • 写入速度，GB/s
    13.0 left arrow 14.2
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2987 left arrow 3146

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Lexar Co Limited LD4AS016G-H3200GST 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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