RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
38
Around -12% lower latency
Faster reading speed, GB/s
20.3
15.5
Average value in the tests
Faster write speed, GB/s
13.4
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
34
Read speed, GB/s
15.5
20.3
Write speed, GB/s
12.0
13.4
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2283
3343
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Samsung M471B1G73DB0-YK0 8GB
Jinyu CL16-16-16 D4-2400 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KHX4133C19D4/8GX 8GB
Kingston 99U5584-001.A00LF 4GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMD64GX4M4B3333C16 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK16GX4M4A2666C15 4GB
Kingston MSI16D3LS1MNG/8G 8GB
Essencore Limited KD48GU88C-26N190A 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965589-007.D01G 8GB
Corsair CM3X2G1600C9 2GB
Kingston 9905702-184.A00G 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Corsair CM5S16GM4800A40K2 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX3M4A2666C11 4GB
Corsair CMR16GX4M2C3200C16 8GB
Report a bug
×
Bug description
Source link