RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
45
Around -73% lower latency
Faster reading speed, GB/s
16.2
11.9
Average value in the tests
Faster write speed, GB/s
12.7
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
26
Read speed, GB/s
11.9
16.2
Write speed, GB/s
8.1
12.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2077
2728
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMD32GX4M4B2800C14 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Corsair CMX8GX3M2A2000C9 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMT64GX4M4C3000C15 16GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK128GX4M8A2133C13 16GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CM4X16GC3600C18K2D 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT16G4SFD8266 16GB
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Report a bug
×
Bug description
Source link