RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
Samsung M471B1G73QH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
Samsung M471B1G73QH0-YK0 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73QH0-YK0 8GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
47
Around -68% lower latency
Faster reading speed, GB/s
16.2
11.8
Average value in the tests
Faster write speed, GB/s
12.7
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
28
Read speed, GB/s
11.8
16.2
Write speed, GB/s
8.0
12.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2061
2417
Samsung M471B1G73QH0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KF2933C17S4/32G 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KF548C38-16 16GB
A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology DDR4 2800 8GB
Kingston 99U5474-038.A00LF 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology 11137401 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
AMD R534G1601U1S-UO 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Corsair CM2X1024-6400 1GB
Samsung M471A5644EB0-CPB 2GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Samsung M471B5173QH0-YK0 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Report a bug
×
Bug description
Source link