Samsung M471B1G73QH0-YK0 8GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Overall score

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Overall score

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Differences Specifications Comments

Differences

Samsung M471B1G73QH0-YK0 8GB

Reasons to consider
Samsung M471B1G73QH0-YK0 8GB

Below the latency in the PassMark tests, ns

47 54

Around 13% lower latency
Faster reading speed, GB/s

11.8 9.3

Average value in the tests
Faster write speed, GB/s

8.0 7.3

Average value in the tests

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Reasons to consider
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M471B1G73QH0-YK0 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

47 54
Read speed, GB/s

11.8 9.3
Write speed, GB/s

8.0 7.3
Memory bandwidth, mbps

12800 17000

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2061 1904

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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