RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
54
Around 50% lower latency
Faster reading speed, GB/s
16.7
9.3
Average value in the tests
Faster write speed, GB/s
11.8
7.3
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
54
Read speed, GB/s
16.7
9.3
Write speed, GB/s
11.8
7.3
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2756
1904
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Kingston 9905469-143.A00LF 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Crucial Technology CT51264BD1339.M16F 4GB
INTENSO 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A2K43DB1-CTD 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Samsung M378B5273DH0-CH9 4GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston K821PJ-MIH 16GB
Samsung M393B1G70BH0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XRGM6C-MIB 16GB
Report a bug
×
Bug description
Source link