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Samsung M393B1G70BH0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Samsung M393B1G70BH0-YK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Overall score
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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Differences Specifications Comments

Differences

Samsung M393B1G70BH0-YK0 8GB Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 49
    Around -172% lower latency
  • Faster reading speed, GB/s
    20.5 left arrow 10.2
    Average value in the tests
  • Faster write speed, GB/s
    16.2 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 18
  • Read speed, GB/s
    10.2 left arrow 20.5
  • Write speed, GB/s
    8.1 left arrow 16.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2465 left arrow 3564

Samsung M393B1G70BH0-YK0 8GB RAM comparisons

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB RAM comparisons

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Latest comparisons

Samsung M393B1G70BH0-YK0 8GB
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