RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73QH0-YK0 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB
Compare
Samsung M471B1G73QH0-YK0 8GB vs V-Color Technology Inc. TL48G24S815RGB 8GB
Overall score
Samsung M471B1G73QH0-YK0 8GB
Overall score
V-Color Technology Inc. TL48G24S815RGB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73QH0-YK0 8GB
Report a bug
Faster write speed, GB/s
8.0
6.8
Average value in the tests
Reasons to consider
V-Color Technology Inc. TL48G24S815RGB 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
47
Around -114% lower latency
Faster reading speed, GB/s
14.5
11.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73QH0-YK0 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
22
Read speed, GB/s
11.8
14.5
Write speed, GB/s
8.0
6.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2061
2136
Samsung M471B1G73QH0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905701-132.A00G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M393A1G40DB1-CRC 8GB
AMD AE34G2139U2 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3000C15-4GTZB 4GB
Samsung M378B5773DH0-CH9 2GB
Kingston ASU21D4U5S1MB-4 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Kingston 9965525-018.A00LF 4GB
Kingston ACR26D4S9S1ME-4 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Report a bug
×
Bug description
Source link