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Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
45
Around -41% lower latency
Faster reading speed, GB/s
16.8
12.3
Average value in the tests
Faster write speed, GB/s
15.4
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
32
Read speed, GB/s
12.3
16.8
Write speed, GB/s
8.0
15.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1992
3579
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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