RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-4000C16-8GTZRA 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
G Skill Intl F4-4000C16-8GTZRA 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-4000C16-8GTZRA 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
45
Around -114% lower latency
Faster reading speed, GB/s
22.4
12.3
Average value in the tests
Faster write speed, GB/s
19.1
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
21
Read speed, GB/s
12.3
22.4
Write speed, GB/s
8.0
19.1
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1992
4251
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL10-8GBXL 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STKD4XMP2400-F 4GB
Kingston KHX2800C14D4/8GX 8GB
Panram International Corporation W4N2400PS-8G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905624-007.A00G 8GB
Kingston 9905403-011.A03LF 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Kingston 9965525-140.A00LF 8GB
Corsair CMU16GX4M2A2400C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Corsair CML16GX3M2A1600C10 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F4-2400C17-4GNT 4GB
Corsair VS2GB1333D4 2GB
Kingston 9905744-077.A00G 16GB
Report a bug
×
Bug description
Source link