RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Compare
Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-4000C19-16GTZSW 16GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
G Skill Intl F4-4000C19-16GTZSW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-4000C19-16GTZSW 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
45
Around -105% lower latency
Faster reading speed, GB/s
16.9
12.3
Average value in the tests
Faster write speed, GB/s
13.6
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
22
Read speed, GB/s
12.3
16.9
Write speed, GB/s
8.0
13.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1992
3192
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
AMD R5316G1609U2K 8GB
Kingston KHX2133C14/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZKO 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston CBD26D4S9D8ME-16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston MSI26D4S9D8ME-16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2L3200C16 16GB
Kingston HP26D4S9S8HJ-8 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905734-003.A00G 32GB
Report a bug
×
Bug description
Source link