RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
Compare
Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-4400C17-16GTZR 16GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
G Skill Intl F4-4400C17-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-4400C17-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
45
Around -105% lower latency
Faster reading speed, GB/s
20.2
12.3
Average value in the tests
Faster write speed, GB/s
17.5
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
22
Read speed, GB/s
12.3
20.2
Write speed, GB/s
8.0
17.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1992
4014
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
G Skill Intl F4-4400C17-16GTZR 16GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Samsung M378B5673EH1-CF8 2GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Essencore Limited KD48GU880-36A180Z 8GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Team Group Inc. DDR4 2800 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK32GX4M2C3333C16 16GB
Samsung M393B1K70CH0-YH9 8GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Kingston 99U5403-036.A00G 4GB
Kingston CBD32D4S2D8HD-16 16GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9965662-013.A01G 16GB
Crucial Technology CT102464BF160B.C16 8GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Kingston 99U5584-001.A00LF 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Kingston KVR800D2N6/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Report a bug
×
Bug description
Source link