RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Faster reading speed, GB/s
12.3
11.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
45
Around -45% lower latency
Faster write speed, GB/s
8.1
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
31
Read speed, GB/s
12.3
11.8
Write speed, GB/s
8.0
8.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1992
2354
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905743-045.A00G 16GB
Corsair CM2X1024-6400C4 1GB
Corsair CMK8GX4M2B3200C16 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CM4X8GF2666C16K8 8GB
Kingston KHX318C10FR/8G 8GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Corsair CMW32GX4M4K4000C19 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C17-4GNT 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
Kingston HX426C16FB2/8-SP 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4266C19-4GTZ 4GB
AMD R538G1601U2S 8GB
Kingston 9965589-013.A00G 8GB
Report a bug
×
Bug description
Source link