RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Samsung M378A5244CB0-CVF 4GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Samsung M378A5244CB0-CVF 4GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Samsung M378A5244CB0-CVF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
45
Around -50% lower latency
Faster reading speed, GB/s
16
12.3
Average value in the tests
Faster write speed, GB/s
12.3
8.0
Average value in the tests
Higher memory bandwidth, mbps
23400
12800
Around 1.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
30
Read speed, GB/s
12.3
16.0
Write speed, GB/s
8.0
12.3
Memory bandwidth, mbps
12800
23400
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
1992
2709
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Samsung M378A5244CB0-CVF 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A5244CB0-CVF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Corsair CM3B4G2C1600L9 4GB
DSL Memory D4SS1G081SH24A-A 8GB
TwinMOS 8DHE3MN8-HATP 2GB
takeMS International AG TMS1GB264D083805EV 1GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3000C16-8GRS 8GB
Kingston KP223C-ELD 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905712-001.B00G 16GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMU32GX4M4A2666C16 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Transcend Information TS512MSH64V4H 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston 99U5700-027.A00G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M4E4133C19 8GB
Report a bug
×
Bug description
Source link