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Samsung M471B5273CH0-CF8 4GB
G Skill Intl F4-3866C18-16GTZR 16GB

Samsung M471B5273CH0-CF8 4GB vs G Skill Intl F4-3866C18-16GTZR 16GB

Overall score
star star star star star
Samsung M471B5273CH0-CF8 4GB

Samsung M471B5273CH0-CF8 4GB

Overall score
star star star star star
G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

Differences Specifications Comments

Differences

Samsung M471B5273CH0-CF8 4GB Reasons to consider
Samsung M471B5273CH0-CF8 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 34
    Around 9% lower latency
G Skill Intl F4-3866C18-16GTZR 16GB Reasons to consider
G Skill Intl F4-3866C18-16GTZR 16GB
Report a bug
  • Faster reading speed, GB/s
    17.5 left arrow 6.6
    Average value in the tests
  • Faster write speed, GB/s
    17.0 left arrow 3.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273CH0-CF8 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    31 left arrow 34
  • Read speed, GB/s
    6.6 left arrow 17.5
  • Write speed, GB/s
    3.6 left arrow 17.0
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    921 left arrow 3697

Samsung M471B5273CH0-CF8 4GB RAM comparisons

AMD R534G1601U1S 4GB
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G Skill Intl F4-3866C18-16GTZR 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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