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Samsung M471B5273CH0-CH9 4GB
Inmos + 256MB
Compare
Samsung M471B5273CH0-CH9 4GB vs Inmos + 256MB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
48
Around -60% lower latency
Faster reading speed, GB/s
11.5
8.9
Average value in the tests
Faster write speed, GB/s
9.1
5.9
Average value in the tests
Higher memory bandwidth, mbps
16800
10600
Around 1.58 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Inmos + 256MB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
30
Read speed, GB/s
8.9
11.5
Write speed, GB/s
5.9
9.1
Memory bandwidth, mbps
10600
16800
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
no data
Ranking PassMark (The more the better)
1420
2318
Samsung M471B5273CH0-CH9 4GB RAM comparisons
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Inmos + 256MB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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