RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Kingston HP26D4S9S8MHF-8 8GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Kingston HP26D4S9S8MHF-8 8GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Kingston HP26D4S9S8MHF-8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Kingston HP26D4S9S8MHF-8 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
48
Around -33% lower latency
Faster reading speed, GB/s
14.8
8.9
Average value in the tests
Faster write speed, GB/s
12.0
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Kingston HP26D4S9S8MHF-8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
36
Read speed, GB/s
8.9
14.8
Write speed, GB/s
5.9
12.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1420
2711
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Kingston HP26D4S9S8MHF-8 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.01G86.9H50C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ21UE8BDF0-DJ-F 2GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT8G4DFS8213.M8FH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9965600-027.A00G 16GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X8GE3000C15K4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 8ATF1G64HZ-2G3B2 8GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMK4GX4M1A2400C16 4GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Samsung M393B2G70AH0-YH9 16GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Report a bug
×
Bug description
Source link