Samsung M471B5273CH0-CH9 4GB vs Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Overall score

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Overall score

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Differences Specifications Comments

Differences

Samsung M471B5273CH0-CH9 4GB

Reasons to consider
Samsung M471B5273CH0-CH9 4GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Reasons to consider
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Below the latency in the PassMark tests, ns

21 48

Around -129% lower latency
Faster reading speed, GB/s

17.6 8.9

Average value in the tests
Faster write speed, GB/s

12.2 5.9

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M471B5273CH0-CH9 4GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

48 21
Read speed, GB/s

8.9 17.6
Write speed, GB/s

5.9 12.2
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1420 3126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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