RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Compare
Samsung M471B5273DH0-CH9 4GB vs Crucial Technology CT4G4DFS824A.M8FF 4GB
Overall score
Samsung M471B5273DH0-CH9 4GB
Overall score
Crucial Technology CT4G4DFS824A.M8FF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273DH0-CH9 4GB
Report a bug
Reasons to consider
Crucial Technology CT4G4DFS824A.M8FF 4GB
Report a bug
Below the latency in the PassMark tests, ns
44
47
Around -7% lower latency
Faster reading speed, GB/s
15.8
9.3
Average value in the tests
Faster write speed, GB/s
10.5
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
44
Read speed, GB/s
9.3
15.8
Write speed, GB/s
5.9
10.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1413
2803
Samsung M471B5273DH0-CH9 4GB RAM comparisons
Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology CT4G4DFS824A.M8FF 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471B1G73BH0-YK0 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
AMD AE34G1601U1 4GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C18-16GTZN 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston MSI32D4S2S1ME-8 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CM4X8GE2666C16K8 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston XN205T-MIE 16GB
Samsung M393B5170FH0-CK0 4GB
Gloway International (HK) STK2400C15-16GB 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
Kingston KVR533D2N4 512MB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
‹
›
Report a bug
×
Bug description
Source link