RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
Kingston HP26D4U6D8ME-16X 16GB
Compare
Samsung M471B5273EB0-CK0 4GB vs Kingston HP26D4U6D8ME-16X 16GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
Kingston HP26D4U6D8ME-16X 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Faster write speed, GB/s
8.9
8.5
Average value in the tests
Reasons to consider
Kingston HP26D4U6D8ME-16X 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
40
Around -43% lower latency
Faster reading speed, GB/s
14.8
12.3
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Kingston HP26D4U6D8ME-16X 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
28
Read speed, GB/s
12.3
14.8
Write speed, GB/s
8.9
8.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1789
2665
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
Kingston HP26D4U6D8ME-16X 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2400C17-8GNT 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston HP26D4U6D8ME-16X 16GB
Kingston 99U5584-005.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905668-002.A00G 8GB
Corsair CMX4GX3M1A1333C9 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905734-073.A00G 16GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905702-071.A00G 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMSX64GX4M2A2933C19 32GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A5143TB2-CTD 4GB
Kingston 9905702-010.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3000C15-4GVR 4GB
Corsair VS1GB800D2 1GB
Kingston KMKYF9-MIB 8GB
Report a bug
×
Bug description
Source link