Samsung M471B5673FH0-CH9 2GB
Corsair CMW256GX4M8E3200C16 32GB

Samsung M471B5673FH0-CH9 2GB vs Corsair CMW256GX4M8E3200C16 32GB

Overall score
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Overall score
star star star star star
Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB

Differences

  • Below the latency in the PassMark tests, ns
    41 left arrow 55
    Around 25% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 11.1
    Average value in the tests
  • Faster write speed, GB/s
    14.4 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CH9 2GB
Corsair CMW256GX4M8E3200C16 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 55
  • Read speed, GB/s
    11.1 left arrow 12.3
  • Write speed, GB/s
    8.2 left arrow 14.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1348 left arrow 2894
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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