Samsung M471B5673FH0-CH9 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB

Samsung M471B5673FH0-CH9 2GB vs SK Hynix V-GeN D4H8GL26A8TX5 8GB

Overall score
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Overall score
star star star star star
SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

Differences

  • Below the latency in the PassMark tests, ns
    21 left arrow 41
    Around -95% lower latency
  • Faster reading speed, GB/s
    17.7 left arrow 11.1
    Average value in the tests
  • Faster write speed, GB/s
    13.3 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CH9 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 21
  • Read speed, GB/s
    11.1 left arrow 17.7
  • Write speed, GB/s
    8.2 left arrow 13.3
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1348 left arrow 3042
RAM Latency Calculator
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