RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5674QH0-YK0 2GB
Gloway International (HK) STKD4XMP2400-F 4GB
Compare
Samsung M471B5674QH0-YK0 2GB vs Gloway International (HK) STKD4XMP2400-F 4GB
Overall score
Samsung M471B5674QH0-YK0 2GB
Overall score
Gloway International (HK) STKD4XMP2400-F 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5674QH0-YK0 2GB
Report a bug
Reasons to consider
Gloway International (HK) STKD4XMP2400-F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
38
Around -52% lower latency
Faster reading speed, GB/s
15.2
7.2
Average value in the tests
Faster write speed, GB/s
11.4
3.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5674QH0-YK0 2GB
Gloway International (HK) STKD4XMP2400-F 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
25
Read speed, GB/s
7.2
15.2
Write speed, GB/s
3.0
11.4
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
915
2346
Samsung M471B5674QH0-YK0 2GB RAM comparisons
Samsung M471B5773DH0-YK0 2GB
Micron Technology 4KTF25664HZ-1G6E1 2GB
Gloway International (HK) STKD4XMP2400-F 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M393B5170FH0-CH9 4GB
Kingston HX432C15PB3/16 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C16-8GTZSW 8GB
AMD R334G1339U2S 4GB
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
SK Hynix DDR2 800 2G 2GB
Essencore Limited KD44GU481-26N1600 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMD16GX4M2B3200C14 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905700-047.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C15-16GVR 16GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK64GX4M4B3600C18 16GB
Kingston 99U5471-012.A00LF 4GB
Avant Technology W6451U67J7240NB 4GB
Report a bug
×
Bug description
Source link