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Samsung M471B5773DH0-CH9 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Compare
Samsung M471B5773DH0-CH9 2GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Overall score
Micron Technology 4ATF51264AZ-3G2J1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
Reasons to consider
Micron Technology 4ATF51264AZ-3G2J1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
43
Around -26% lower latency
Faster reading speed, GB/s
17.3
11
Average value in the tests
Faster write speed, GB/s
12.0
7.2
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
34
Read speed, GB/s
11.0
17.3
Write speed, GB/s
7.2
12.0
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1393
2665
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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