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Samsung V-GeN D4S16GL26A8TL6 16GB
SK Hynix HMAA1GS6CJR6N-XN 8GB

Samsung V-GeN D4S16GL26A8TL6 16GB vs SK Hynix HMAA1GS6CJR6N-XN 8GB

Overall score
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Overall score
star star star star star
SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Differences Specifications Comments

Differences

Samsung V-GeN D4S16GL26A8TL6 16GB Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 54
    Around 41% lower latency
  • Faster reading speed, GB/s
    16 left arrow 15.7
    Average value in the tests
  • Faster write speed, GB/s
    13.4 left arrow 11.6
    Average value in the tests
SK Hynix HMAA1GS6CJR6N-XN 8GB Reasons to consider
SK Hynix HMAA1GS6CJR6N-XN 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung V-GeN D4S16GL26A8TL6 16GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    32 left arrow 54
  • Read speed, GB/s
    16.0 left arrow 15.7
  • Write speed, GB/s
    13.4 left arrow 11.6
  • Memory bandwidth, mbps
    19200 left arrow 25600
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1897 left arrow 2511

Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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