RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Faster write speed, GB/s
13.6
12.0
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
46
Around -84% lower latency
Faster reading speed, GB/s
15.9
14.2
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
25
Read speed, GB/s
14.2
15.9
Write speed, GB/s
13.6
12.0
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2717
3023
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM comparisons
Corsair CMSO4GX3M1C1600C11 4GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Kingston 99U5403-465.A00LF 8GB
Apacer Technology 78.DAGNN.4030B 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965596-002.B00G 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X32GC3200C16K2E 32GB
PNY Electronics 64C0MHHHJ-HS 4GB
Mushkin 99[2/7/4]199[F/T] 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2133C15-4GVK 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KHX3200C20S4/8G 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Samsung M3 78T2863QZS-CF7 1GB
Panram International Corporation PUD43000C168G2NJR 8GB
Kingston 99U5584-010.A00LF 4GB
Essencore Limited KD4AGU880-32A160U 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Report a bug
×
Bug description
Source link