RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs G Skill Intl F4-3600C16-16GTRS 16GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
G Skill Intl F4-3600C16-16GTRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-16GTRS 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Faster reading speed, GB/s
18
14.2
Average value in the tests
Faster write speed, GB/s
16.2
13.6
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
14.2
18.0
Write speed, GB/s
13.6
16.2
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2717
3933
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-16GTRS 16GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905622-055.A00G 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-8GTZSW 8GB
Samsung M393B5170FH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
A-DATA Technology DQVE1908 512MB
V-GEN D4H8GS24A8 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Apacer Technology 78.CAGR4.DFC0B 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M378A2K43BB1-CRC 16GB
Report a bug
×
Bug description
Source link