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Samsung M393B5170FH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M393B5170FH0-CK0 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

Samsung M393B5170FH0-CK0 4GB Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 37
    Around 27% lower latency
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Faster reading speed, GB/s
    16 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 37
  • Read speed, GB/s
    11.8 left arrow 16.0
  • Write speed, GB/s
    7.3 left arrow 12.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2057 left arrow 2808

Samsung M393B5170FH0-CK0 4GB RAM comparisons

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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