RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4000C19-4GTZ 4GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs G Skill Intl F4-4000C19-4GTZ 4GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
G Skill Intl F4-4000C19-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C19-4GTZ 4GB
Report a bug
Below the latency in the PassMark tests, ns
20
46
Around -130% lower latency
Faster reading speed, GB/s
19.4
14.2
Average value in the tests
Faster write speed, GB/s
15.0
13.6
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4000C19-4GTZ 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
20
Read speed, GB/s
14.2
19.4
Write speed, GB/s
13.6
15.0
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2717
3217
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C19-4GTZ 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C15-16GTZKY 16GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
A-DATA Technology ADOVE1A0834E 1GB
Apacer Technology 78.CAGPW.40C0B 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Samsung M3 78T5663RZ3-CE6 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD416G24002 16GB
Kingston 9965525-140.A00LF 8GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Kingston HP698651-154-MCN 8GB
Kingston XRGM6C-MIE 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C14-16GTZR 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965589-005.A01G 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
Report a bug
×
Bug description
Source link