RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
32
Around 31% lower latency
Faster reading speed, GB/s
17.7
10.5
Average value in the tests
Faster write speed, GB/s
12.7
8.9
Average value in the tests
Reasons to consider
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
32
Read speed, GB/s
17.7
10.5
Write speed, GB/s
12.7
8.9
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3075
2386
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI26D4S9D8ME-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965640-016.A00G 32GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMD32GX4M2C3200C14T 16GB
Mushkin 991586 2GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Kingston 9965525-144.A00LF 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 99U5584-001.A00LF 4GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMW32GX4M4K4266C19 8GB
Samsung M3 78T3354BZ0-CCC 256MB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
EVGA 16G-D4-2800-MR 4GB
Samsung M378B5173BH0-CH9 4GB
Panram International Corporation PUD42400C154GNJW 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMR16GX4M2K4266C19 8GB
Report a bug
×
Bug description
Source link