RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT325U6BFR8C-H9 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Compare
SK Hynix HMT325U6BFR8C-H9 2GB vs Micron Technology CT4G4DFS8213.8FA11 4GB
Overall score
SK Hynix HMT325U6BFR8C-H9 2GB
Overall score
Micron Technology CT4G4DFS8213.8FA11 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT325U6BFR8C-H9 2GB
Report a bug
Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
39
Around -11% lower latency
Faster reading speed, GB/s
15
12.8
Average value in the tests
Faster write speed, GB/s
12.0
7.7
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT325U6BFR8C-H9 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
35
Read speed, GB/s
12.8
15.0
Write speed, GB/s
7.7
12.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1775
2654
SK Hynix HMT325U6BFR8C-H9 2GB RAM comparisons
AMD R5S34G1601U1S 4GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CK0 4GB
Samsung M471B5273CH0-CH9 4GB
Samsung M3 93T5750CZA-CE6 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Samsung M393A2K43BB1-CRCA1 16GB
SK Hynix HMT325U6BFR8C-H9 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Crucial Technology CT102464BA160B.M16 8GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR16GX4M2D3200C16 8GB
Kingston 99U5469-045.A00LF 4GB
Golden Empire CL15-17-17 D4-2666 8GB
Kingston KN2M64-ETB 8GB
G Skill Intl F4-3200C16-8GVK 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905744-005.A00G 16GB
Report a bug
×
Bug description
Source link