RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT451S6BFR8A-PB 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Chun Well Technology Holding Limited D4U0832161B 8GB

Overall score
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Differences Specifications Comments

Differences

SK Hynix HMT451S6BFR8A-PB 4GB Reasons to consider
SK Hynix HMT451S6BFR8A-PB 4GB
Report a bug
Chun Well Technology Holding Limited D4U0832161B 8GB Reasons to consider
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 44
    Around -29% lower latency
  • Faster reading speed, GB/s
    19.1 left arrow 12.3
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMT451S6BFR8A-PB 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 34
  • Read speed, GB/s
    12.3 left arrow 19.1
  • Write speed, GB/s
    7.8 left arrow 12.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1977 left arrow 3178

SK Hynix HMT451S6BFR8A-PB 4GB RAM comparisons

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited D4U0832161B 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Memory RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
Memory RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Memory RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
Memory RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
Memory RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Memory RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Memory RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Team Group Inc. Team-Elite-2133 4GB
Team Group Inc. Team-Elite-2133 4GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
INTENSO 5641152 4GB
INTENSO 5641152 4GB
Memory RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
Memory RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Memory RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Memory RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
Memory RAM