RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT451S6BFR8A-PB 4GB
DSL Memory CIR-W4SUSS2408G 8GB
Compare
SK Hynix HMT451S6BFR8A-PB 4GB vs DSL Memory CIR-W4SUSS2408G 8GB
Overall score
SK Hynix HMT451S6BFR8A-PB 4GB
Overall score
DSL Memory CIR-W4SUSS2408G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT451S6BFR8A-PB 4GB
Report a bug
Reasons to consider
DSL Memory CIR-W4SUSS2408G 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
44
Around -100% lower latency
Faster reading speed, GB/s
17.6
12.3
Average value in the tests
Faster write speed, GB/s
13.2
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT451S6BFR8A-PB 4GB
DSL Memory CIR-W4SUSS2408G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
22
Read speed, GB/s
12.3
17.6
Write speed, GB/s
7.8
13.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1977
3024
SK Hynix HMT451S6BFR8A-PB 4GB RAM comparisons
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
DSL Memory CIR-W4SUSS2408G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Kingston 9905734-059.A00G 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
AMD R538G1601U2S 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-2400C16-4GFX 4GB
AMD R534G1601U1S-UO 4GB
Samsung M393A2K43BB1-CRC 16GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMK16GX4M4A2800C16 4GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Avant Technology F6451U64F9333G 4GB
Corsair MK16GX44B3000C15 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston SMD4-S8G48HJ-26V 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M393A1K43BB1-CTD 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9965640-001.C00G 16GB
Samsung M393B1K70QB0-CK0 8GB
AMD R7416G2400U2S 16GB
Report a bug
×
Bug description
Source link