RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
19.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
63
Around -232% lower latency
Faster write speed, GB/s
15.8
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
19
Read speed, GB/s
3,231.0
19.5
Write speed, GB/s
1,447.3
15.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
3435
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C18-32GTZR 32GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2A2133C13 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Kingston KHX8500D2K2/2GN 1GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F5-6400J3239G16G 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Ramaxel Technology RMR5030ME68F9F1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Corsair CM3B4G2C1600L9 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology GD2.2229BH.001 16GB
Report a bug
×
Bug description
Source link