RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C15-8GVR 8GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-2400C15-8GVR 8GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
G Skill Intl F4-2400C15-8GVR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Faster reading speed, GB/s
5
16.4
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C15-8GVR 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
46
Around -44% lower latency
Faster write speed, GB/s
11.9
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C15-8GVR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
32
Read speed, GB/s
5,535.6
16.4
Write speed, GB/s
1,852.4
11.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
858
2973
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-2400C15-8GVR 8GB RAM comparisons
Kingston KHYXPX-HYJ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-174.A00LF 2GB
Micron Technology TEAMGROUP-UD4-3000 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-8GVSB 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GTZ 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C18-8GRS 8GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
INTENSO M418039 8GB
Samsung M378B5773DH0-CH9 2GB
Samsung M47472K43DB1-CTD 16GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F3-1600C9-4GRSL 4GB
Report a bug
×
Bug description
Source link