RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Faster reading speed, GB/s
5
15.5
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
46
Around -77% lower latency
Faster write speed, GB/s
10.2
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
26
Read speed, GB/s
5,535.6
15.5
Write speed, GB/s
1,852.4
10.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
2486
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF25664AZ-1G4F1 2GB
SK Hynix HMA41GR7AFR4N-TF 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung M471A5244CB0-CRC 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology M471A1K43CB1-CTD 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK16GX4M2A2666C16 8GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Samsung M393B2G70BH0-CH9 16GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Essencore Limited KD48GS88A-26N1600 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Report a bug
×
Bug description
Source link