RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Faster reading speed, GB/s
5
17.2
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
46
Around -109% lower latency
Faster write speed, GB/s
12.4
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
22
Read speed, GB/s
5,535.6
17.2
Write speed, GB/s
1,852.4
12.4
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
3035
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905678-023.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT25664AC800.K16F 2GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G213381 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
Kingston KVR800D2N6/2G 2GB
Samsung M471A1K43CB1-CTD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905734-063.A00G 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMD32GX4M4A2400C12 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Kingston 9905702-010.A00G 8GB
Corsair CM4X16GC3000C16K8 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Report a bug
×
Bug description
Source link