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takeMS International AG TMS2GB264D083805EV 2GB
INTENSO 5641152 4GB

takeMS International AG TMS2GB264D083805EV 2GB vs INTENSO 5641152 4GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
INTENSO 5641152 4GB

INTENSO 5641152 4GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D083805EV 2GB Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.1
    Average value in the tests
INTENSO 5641152 4GB Reasons to consider
INTENSO 5641152 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 50
    Around -117% lower latency
  • Faster write speed, GB/s
    6.8 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
INTENSO 5641152 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 23
  • Read speed, GB/s
    3,757.3 left arrow 14.1
  • Write speed, GB/s
    1,457.4 left arrow 6.8
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 2215

takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

INTENSO 5641152 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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