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takeMS International AG TMS2GB264D083805EV 2GB
Mushkin 99[2/7/4]191[F/T] 4GB

takeMS International AG TMS2GB264D083805EV 2GB vs Mushkin 99[2/7/4]191[F/T] 4GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D083805EV 2GB Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.5
    Average value in the tests
Mushkin 99[2/7/4]191[F/T] 4GB Reasons to consider
Mushkin 99[2/7/4]191[F/T] 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 50
    Around -92% lower latency
  • Faster write speed, GB/s
    10.1 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin 99[2/7/4]191[F/T] 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 26
  • Read speed, GB/s
    3,757.3 left arrow 14.5
  • Write speed, GB/s
    1,457.4 left arrow 10.1
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 2480

takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Mushkin 99[2/7/4]191[F/T] 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin 99[2/7/4]191[F/T] 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
Memory RAM
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Memory RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B3600C18 8GB
Corsair CMK16GX4M2B3600C18 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Memory RAM
Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
Memory RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
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Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R9S48G3206U2S 8GB
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Samsung M471A1K43DB1-CTD 8GB
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AMD R5316G1609U2K 8GB
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Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
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