RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
17.7
Average value in the tests
Faster write speed, GB/s
870.4
13.1
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
87
Around -295% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
22
Read speed, GB/s
3,155.6
17.7
Write speed, GB/s
870.4
13.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
2666
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMN16GX4M2Z3200C16 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M393A2G40EB1-CRC 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMA82GR7MFR4N-UH 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905665-020.A00G 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M393B2G70AH0-YH9 16GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3000C15-8GTZ 8GB
Report a bug
×
Bug description
Source link