RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
20.4
Average value in the tests
Faster write speed, GB/s
870.4
17.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
87
Around -383% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
18
Read speed, GB/s
3,155.6
20.4
Write speed, GB/s
870.4
17.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
3814
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. DDR4 3600 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Kingston 9905403-156.A00LF 2GB
Kingston KF3600C16D4/8GX 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT25664BA1339.C8F1 2GB
Kingston KHX318C10FR/8G 8GB
Kingston 9905678-005.A00G 8GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B1K70BH1-CH9 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Kingston 9965525-018.A00LF 4GB
Kingston ASU16D3LU1KBG/8G 8GB
Kingston 9905402-665.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Kingston 9905403-156.A00LF 2GB
Super Talent L89 11/2011 LOGIN. 4GB
Samsung M386B4G70DM0-CMA4 32GB
Good Wealth Technology Ltd. 8GB
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Kingston 9965516-112.A00LF 16GB
Kingston 9905625-098.A00G 16GB
Report a bug
×
Bug description
Source link